Direct Comparison of Catalyst-Free and Catalyst-Induced GaN Nanowires  

作　　者：Caroline Chèze Lutz Geelhaar Oliver Brandt Walter M.Weber Henning Riechert Steffen Münch Ralph Rothemund Stephan Reitzenstein Alfred Forchel Thomas Kehagias Philomela Komninou George P.Dimitrakopulos Theodoros Karakostas 

机构地区：[1]Paul-Drude-Institut für Festkörperelektronik,5-7 Hausvogteiplatz,Berlin 10117,Germany [2]NaMLab gGmbH,Dresden 01187,Germany [3]Technische Physik,Universität Würzburg,Am Hubland,Würzburg 97074,Germany [4]Physics Department,Aristotle University,Thessaloniki 54124,Greece

出　　处：《Nano Research》2010年第7期528-536,共9页纳米研究（英文版）

基　　金：This work has been supported by the EU through the IST project NODE(No.015783);the Marie Curie RTN PARSEM(MRTN-CT-2004-005583).

摘　　要：GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds.Under identical growth conditions of temperature andⅤ/Ⅲratio,both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets.However,the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker.These differences can be explained as effects of the catalyst Ni seeds.

关 键 词：Nanowire NANOCOLUMN molecular beam epitaxy(MBE) photoluminescence stacking faults CATALYST 

分 类 号：TB3[一般工业技术—材料科学与工程]