Ge0.94Mn0.06 nanocolumn thin film is a unique phase of GeMn diluted magnetic semiconductors (DMS) which exhibit Curie temperature (TC) > 400 K. The multilayers of Ge0.94Mn0.06
We investigate in detail the self-assembled nucleation and growth of vertically oriented GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows for the grow...
Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of ...
This work has been supported by the EU through the IST project NODE(No.015783);the Marie Curie RTN PARSEM(MRTN-CT-2004-005583).
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds.Under identical growth conditions of temperature andⅤ/Ⅲratio,both types of GaN nanowires are of w...
The authors gratefully acknowledge support from the National Natural Science Foundation of China under Grant No. 50472058.
ZnO nanoneedle/nanocolumn (NN/NC) composite films were grown via reactive electron beam evaporation (REBE) in the NH3/H2 gaseous mixture by using polycrystalline ZnO ceramic targets as source materials. The growth...
Nanostructured columns with a length about several tens of micrometer and a diameter of about 80 nm were obtained by molecular recognition directed self-assembly of a pair of comple- mentary molecular components, 4-a...