Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe  

作　　者：Haihang Wang Priya Gopal Silvia Picozzi Stefano Curtarolo Marco Buongiorno Nardelli Jagoda Sławińska 

机构地区：[1]Department of Physics,University of North Texas,Denton,TX 76203,USA [2]Consiglio Nazionale delle Ricerche,Istituto SPIN,UOS L’Aquila,Sede di lavoro CNR-SPIN c/o Univ.G.D’Annunzio,66100 Chieti,Italy [3]Center for Autonomous Materials Design,Duke University,Durham,NC 27708,USA [4]Materials Science,Electrical Engineering,Physics and Chemistry,Duke University,Durham,NC 27708,USA

出　　处：《npj Computational Materials》2020年第1期1607-1613,共7页计算材料学（英文）

基　　金：The members of the AFLOW Consortium(http://www.aflow.org)acknowledge the grant ONR-MURI N000141310635.

摘　　要：Ferroelectric Rashba semiconductors(FERSCs)have recently emerged as a promising class of spintronics materials.The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties,including ferroelectric switching of Rashba spin texture,suggests that the electron’s spin could be controlled by using only electric fields.In this regard,recent experimental studies revealing charge-to-spin interconversion phenomena in two prototypical FERSCs,GeTe and SnTe,appear extremely relevant.Here,by employing density functional theory calculations,we investigate spin Hall effect(SHE)in these materials and show that it can be large either in ferroelectric or paraelectric structure.We further explore the compatibility between doping required for the practical realization of SHE in semiconductors and polar distortions which determine Rashba-related phenomena in FERSCs,but which could be suppressed by free charge carriers.

关 键 词：STRUCTURE RASHBA FERROELECTRIC 

分 类 号：O47[理学—半导体物理]