锗片表面钝化探究进展  

Research Progress of the Surface Passivation on Germanium Wafer

作　　者：杨静[1] 韩焕鹏[1] 张伟才[1] YANG Jing;HAN Huanpeng;ZHANG Weicai(The 46^(th)Research Institute of CETC,Tianjin 300220)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2021年第4期27-30,39,共5页Equipment for Electronic Products Manufacturing

摘　　要：从锗片实际应用中存在的表面均匀性差、表面质量不稳定问题出发,对影响锗片表面质量的因素进行了分析。研究结果表明,对锗片表面进行钝化后,能够改变锗抛光片表面的悬挂键状态、降低界面态密度,最终提高锗片的实际应用效果。并重点对氢钝化、氯钝化、氮钝化、硫钝化、硅钝化、氟钝化、烷烃钝化等主流钝化方式的适用性及优劣性进行了对比分析,对比分析主要从钝化液种类的选取、钝化时间与温度、钝化效果几个方面进行。Based on the problems of poor surface uniformity and unstable surface quality in the practical application of germanium wafer,factors affecting surface quality are analyzed in this paper.The investigation results show that surface passivation could change the dangling bond state on the germanium wafer,reduce the interface state density,and ultimately improve the practical application effect of the germanium wafer.The applicability and advantages or disadvantages of several mainstream methods including hydrogen passivation,chlorine passivation,nitrogen passivation,sulfur passivation,silicon passivation,fluorine passivation,and alkane passivation are analyzed.The analysis is mainly carried out from several aspects such as selection of passivation solution,passivation time and temperature,passivation effect,and so on.

关 键 词：锗片 钝化 表面质量 悬挂键 界面态密度 

分 类 号：TN305.5[电子电信—物理电子学]