晶圆缺陷的种类及处理方法研究  

Research on Types and Treatment Methods of Wafer Defects

作　　者：郭帝江 常志 Guo Dijiang;Chang Zhi(The Second Research Institute of China Electronics Technology Group Corporation,Taiyuan Shanxi 030024)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《现代工业经济和信息化》2021年第6期135-136,共2页Modern Industrial Economy and Informationization

摘　　要：人工参与的集成电路制造过程,不可避免地会引入各种污染,产生晶圆缺陷,对于器件的良率等性能参数有很大的影响。对半导体晶圆在湿法清洗工艺中可能导致的各种缺陷成因进行分析,并对缺陷的处理方式做了简要探讨。In the process of artificial integrated circuit manufacturing, all kinds of pollution will inevitably be introduced, resulting in wafer defects, which have a great impact on the yield and other performance parameters of devices. This paper analyzes the causes of various defects in the wet cleaning process of semiconductor wafer, and briefly discusses the treatment methods of defects.

关 键 词：半导体晶圆 湿法清洗 缺陷 

分 类 号：TG1[金属学及工艺—金属学] TN7[电子电信—电路与系统]