Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED  

作　　者：WANG Jia-Xing WANG Lai HAO Zhi-Biao LUO Yi 王嘉星;汪莱;郝智彪;罗毅(Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084)

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084

出　　处：《Chinese Physics Letters》2011年第11期249-252,共4页中国物理快报（英文版）

基　　金：by the National Basic Research Program of China under Grant Nos 2011CB301902 and 2011CB301903;the National High-Technology Research and Development Program of China under Grant Nos 2011AA03A112,2011AA03A106,and 2011AA03A105;the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(No 2011BAE01B07);the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085;the Beijing Natural Science Foundation under Grant No 4091001.

摘　　要：In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well(MQW)light emitting diodes(LEDs),a reasonable model is set up,taking all the possible factor(carrier delocalization,carrier leakage and Auger recombination)into account.By fitting the external quantum efficiency-injection current(η–Ⅰ)measurements of two LED samples,the validity of the model is demonstrated.The fit results show that the main origin of efficiency droop at a high injection current is carrier leakage.Furthermore it is also indicated that carrier delocalization plays an important role in the efficiency droop effect in those LEDs of large localization degree.

关 键 词：INGAN/GAN LED INJECTION 

分 类 号：TN3[电子电信—物理电子学]