Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System  

作　　者：LIU Bin SUN Guo-Sheng LIU Xing-Fang ZHANG Feng DONG Lin ZHENG Liu YAN Guo-Guo LIU Sheng-Bei ZHAO Wan-Shun WANG Lei ZENG Yi-Ping LI Xi-Guang WANG Zhan-Guo YANG Fei 刘斌;孙国胜;刘兴昉;张峰;董林;郑柳;闫果果;刘胜北;赵万顺;王雷;曾一平;李锡光;王占国;杨霏(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Dongguan Tianyu Semiconductor,Inc.,Dongguan 523000;State Grid Smart Grid Research Institute,Beijing 100192)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]Dongguan Tianyu Semiconductor,Inc.,Dongguan 523000 [3]State Grid Smart Grid Research Institute,Beijing 100192

出　　处：《Chinese Physics Letters》2013年第12期157-160,共4页中国物理快报（英文版）

基　　金：Supported in part by the Program of 2011(2nd)Innovative Research Teams and Leading Talents in Guangdong Province of China,the Program of Strategical Boomindustry Key Technology of Guangdong Province,the Major Science and Technology Program of Dongguan,the Program of State Grid Smart Grid Research Institute(SGRIWD7113004);the National Natural Science Foundation of China under Grant Nos 51102225 and 61274007;the Natural Science Foundation of Beijing under Grant No 4132074.

摘　　要：Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH_(4)-C_(2)H_(4)-H_(2) system by low pressure hot-wall vertical chemical vapor deposition(CVD).Thick epilayers of 45μm are achieved at a high growth rate up to 26μm/h under an optimized growth condition,and are characterized by using a Normaski optical microscope,a scanning electronic microscope(SEM),an atomic force microscope(AFM)and an x-ray diffractometer(XRD),indicating good crystalline quality with mirror-like smooth surfaces and an rms roughness of 0.9 nm in a 5μm×5μm area.The dependence of the 4H-SiC growth rate on growth conditions on 4°off-axis 4H-SiC substrates and its mechanism are investigated.It is found that the H_(2) flow rate could influence the surface roughness,while good surface morphologies without Si droplets and epitaxial defects such as triangular defects could be obtained by increasing temperature.

关 键 词：temperature ROUGHNESS EPITAXIAL 

分 类 号：TN3[电子电信—物理电子学]