Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery  

作　　者：CHENG Zai-Jun SAN Hai-Sheng CHEN Xu-Yuan LIU Bo FENG Zhi-Hong 程再军;伞海生;陈旭远;刘波;冯志红(Pen-Tung Sah Micro-Nano Technology Research Center,Xiamen University,Xiamen 361005;Faculty of Science and Engineering,Vestfold University College,P.O.Box 2243,N-3103,Tønsberg,Norway;Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute,Shijiazhuang 050051)

机构地区：[1]Pen-Tung Sah Micro-Nano Technology Research Center,Xiamen University,Xiamen 361005 [2]Faculty of Science and Engineering,Vestfold University College,P.O.Box 2243,N-3103,Tønsberg,Norway [3]Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute,Shijiazhuang 050051

出　　处：《Chinese Physics Letters》2011年第7期309-312,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China(No 51075344);Natural Science Foundation of Fujian Province(No 2010J01015).

摘　　要：A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4×4 mm^(2) planar solid 63Ni source with an activity of 2 mCi,the open−circuit voltage Voc of the fabricated single 2×2 mm^(2) cell reaches as high as 1.62 V,the short−circuit current density Jsc is measured to be 16nA/cm^(2).The microbattery has a fill factor of 55%,and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

关 键 词：GAN BATTERY DIODE 

分 类 号：TN3[电子电信—物理电子学]