Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy  

作　　者：PAN Jian-Hai WANG Xin-Qiang CHEN Guang LIU Shi-Tao FENG Li XU Fu-Jun TANG Ning SHEN Bo 潘建海;王新强;陈广;刘世韬;冯丽;许福军;唐宁;沈波(State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871)

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871

出　　处：《Chinese Physics Letters》2011年第6期318-321,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China under Grant Nos 11023003,60890193 and 60990313;the Specialized Research Fund for the Doctoral Program of Higher Education in China.

摘　　要：We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780°C.However,the growth window to obtain an Al−droplet-free surface is too narrow to be well-controlled.However,the growth window can be greatly broadened by increasing the growth temperature up to 950°C,where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms.The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures.

关 键 词：EPITAXY SAPPHIRE NARROW 

分 类 号：TN3[电子电信—物理电子学]