Growth of 2 um Crack-Free GaN on Si(111)Substrates by Metal Organic Chemical Vapor Deposition  

作　　者：WEI Meng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei PAN Xu HOU Qi-Feng WANG Zhan-Guo 魏萌;王晓亮;肖红领;王翠梅;潘旭;侯其峰;王占国(Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》2011年第4期227-230,共4页中国物理快报（英文版）

基　　金：Supported by the Knowledge Innovation Project of the Chinese Academy of Sciences under Grant Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02;the National Natural Science Foundation of China under Grant Nos 60890193 and 60906006;the National Basic Research Program of China under Grant Nos 2006CB604905 and 2010CB327503.

摘　　要：A 2μm high quality crack-free GaN film was successfully grown on 2-inch Si(111)substrates by metal organic chemical vapor deposition with a high temperature AIN/graded-AlGaN multibuffer and an AIN/GaN superlattice interlayer.It is found that the structures,as well as the thicknesses of the multibuffer and interlayer,are crucial for the growth of a crack-free GaN epilayer.The GaN(0002)XRD FWHM of the crack-free sample is 479.8arcsec,indicating good crystal quality.An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement.The electron mobility of two-dimensional electron gas increases from 1928 cm^(2)/V.S to 12277cm^(2)/V s when the test-temperature decreases from room temperature to liquid nitrogen temperature.The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire,and the largest value is obtained for an AlGaN/GaN/Si(111)heterostructure grown by metal organic chemical vapor deposition.

关 键 词：SI(111) measurement temperature 

分 类 号：TN3[电子电信—物理电子学]