Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN  

作　　者：HOU Qi-Feng WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei YANG Cui-Bai YIN Hai-Bo LI Jin-Min WANG Zhan-Guo 侯奇峰;王晓亮;肖红领;王翠梅;杨翠柏;殷海波;李晋闽;王占国(Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,PO Box 912,Beijing 100083;Key Laboratory of Semiconductor Materials Science,Chinese Academy of Sciences,PO Box 912,Beijing 100083)

机构地区：[1]Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,PO Box 912,Beijing 100083 [2]Key Laboratory of Semiconductor Materials Science,Chinese Academy of Sciences,PO Box 912,Beijing 100083

出　　处：《Chinese Physics Letters》2011年第3期184-187,共4页中国物理快报（英文版）

基　　金：Supported by the Knowledge Innovation Project of Chinese Academy of Sciences(Nos YYYJ-0701-02,ISCAS2008T01,ISCAS2009L01 and ISCAS2009L02);the National Natural Sciences Foundation of China(Nos 60890193 and 60906006);and the National Basic Research Program of China(Nos 2006CB604905 and 2010CB327503).

摘　　要：Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence.Intense yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yellow luminescence and blue luminescence bands are very weak.The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density.The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate.It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations.An approximately 3.35eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN.A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

关 键 词：GAN LUMINESCENCE YELLOW 

分 类 号：TN3[电子电信—物理电子学]