Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells  

作　　者：XIE Zi-Li ZHANG Rong LIU Bin XIU Xiang-Qian SU Hui LI Yi HUA Xue-Mei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG You-Dou 谢自力;张荣;刘斌;修向前;苏辉;李毅;华雪梅;赵红;陈鹏;韩平;施毅;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and National Laboratory of Solid State Microstructures,School of Electronics Science and Engineering,Nanjing University,Nanjing 210093)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and National Laboratory of Solid State Microstructures,School of Electronics Science and Engineering,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2011年第8期247-249,共3页中国物理快报（英文版）

基　　金：by the National Basic Research Program of China under Grant No 2011CB301900;the National High-Technology Research and Development Program of China under Grant No 2009AA03A198;the National Natural Science Foundation of China under Grant Nos 60721063,60676057,60731160628,60820106003,60990311 and 60906025;the Natural Science Foundation of Jiangsu Province(BK2008019,BK2009255);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.

摘　　要：Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire substrate,which consists of an approximately 2-µm−thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier layer.The surface morphology of the MQW structures is observed by an atomic force microscope(AFM),which indicates the presence of islands of several tens of nanometers in height on the surface.The high resolution x−ray diffraction(XRD)θ/2θscan is carried out on the symmetric(0002)of the InGaN/GaN MQW structures.At least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active region.Besides the 364 nm GaN band edge emission,two main emissions of blue and amber light from these MQWs are found,which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs.

关 键 词：INGAN/GAN SAPPHIRE QUANTUM 

分 类 号：TN3[电子电信—物理电子学]