PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS/AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY  

作　　者：TANG Yinsheng JIANG Desheng 唐寅生;江德生(University of Science and Technology of China,Hefei;Institute of Semiconductors,Academia Sinica,Beijing)

机构地区：[1]University of Science and Technology of China,Hefei [2]Institute of Semiconductors,Academia Sinica,Beijing

出　　处：《Chinese Physics Letters》1987年第6期283-285,共3页中国物理快报（英文版）

摘　　要：Room temperature photoreflectance were made on a selectively doped GaAs/n-Al_(X)Ga_(1-X)As two-dimensional electron gas grown by molecular beam epitaxy(MBE).The lineshapes can be made fit by Aspnes'theory,and the results explained with a simple model.

关 键 词：GAAS BEAM 

分 类 号：TN3[电子电信—物理电子学]