Rectifying the Current−Voltage Characteristics of a LiNbO3 Film/GaN Heterojunction  

作　　者：HAO Lan-Zhong LIU Yun-Jie ZHU Jun LEI Hua-Wei LIU Ying-Ying TANG Zheng-Yu ZHANG Ying ZHANG Wan-Li LI Yan-Rong 郝兰众;刘云杰;朱俊;雷华伟;刘莹莹;唐正瑜;张鹰;张万里;李言荣(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054;Faculty of Science,China University of Petroleum,Qingdao 266555)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054 [2]Faculty of Science,China University of Petroleum,Qingdao 266555

出　　处：《Chinese Physics Letters》2011年第10期240-243,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Development Program of China under Grant No.61363;the National Science Foundation of China under Grant Nos.50932002 and 51102284;the Shandong Provincial Natural Science Foundation under Grant No.ZR2010AQ017.

摘　　要：Epitaxial LiNbO_(3)(LNO)films are grown on n−type GaN semiconductor substrates,forming LNO/GaN p-n junctions.The current-voltage(I–V)and capacitance−voltage(C–V)characteristics of the junctions are studied.The I–V curve shows a clear rectifying property with a turn−on voltage of 2.4 V.For the forward voltages,the conduction mechanism transits from Schottky thermionic emission for low voltages to space-charge-limited current for large voltages.Reverse C–V characteristics exhibit a linear 1/C2 versus V plot,from which a built-in potential of 0.34 V is deduced.These results are explained using the energy-band structure of the LNO/GaN junction.

关 键 词：GAN SCHOTTKY CAPACITANCE 

分 类 号：TN3[电子电信—物理电子学]