Phonon Participation in the Light Emission Process of Porous GeSi Layer  

作　　者：SHI Hongtao ZHENG Youdou YUAN Renkuan 

机构地区：[1]Department of Physics,Nanjing University,Nanjing 210008

出　　处：《Chinese Physics Letters》1993年第5期317-320,共4页中国物理快报（英文版）

摘　　要：Relaxed Ge_(0.5)Si_(0.5)/Si heterostructure was grown by the rapid radiant heating,very low pressure chemical vapor deposition(RRH-VLP/CVD).We report the anomalous temperature dependence of photoluminescence(PL)from porous GeSi layer at 77-300K.The peak-emission energy of PL spectra from porous GeSi layer decreases with increasing temperature while its peak intensity rises,which is quite different from the temperature dependence of porous Si layer.Such dependencies are reversible and independent of temperature-change directions.No obvious 480cm^(-1) peak was observed in Raman spectrum,indicating that no substantial amorphous phase contributes the intense light emission from the porous materials.We attribute such anomalous behavior of porous GeSi layer to phonon participation in the light-emission process of porous GeSi layer.

关 键 词：GESI POROUS ANOMALOUS 

分 类 号：TN3[电子电信—物理电子学]