Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells  

作　　者：ZHANG Xiao-Fu LI Yu-Dong GUO Qi LU Wu 张孝富;李豫东;郭旗;陆妩(Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics&Chemistry,Chinese Academy of Sciences,Urumqi 830011)

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics&Chemistry,Chinese Academy of Sciences,Urumqi 830011

出　　处：《Chinese Physics Letters》2013年第7期135-137,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11275262.

摘　　要：We investigate the photoluminescence(PL)emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation.The PL peak intensity exhibits a slight enhancement after low-dose electron irradiation(2×10^(13) e/cm^(2)),and then decreases with the cumulative electron dose.Meanwhile,the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively high.With respect to the yellow photoluminescence,there is no significant change until the electron fluence has accumulated up to 10^(14) e/cm^(2).

关 键 词：INGAN/GAN Electron Quantum 

分 类 号：TN3[电子电信—物理电子学]