High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence  

作　　者：WANG Wen-Jie CHEN Peng YU Zhi-Guo LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei ZHAO Hong HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou 王文杰;陈鹏;于治国;刘斌;谢自力;修向前;吴真龙;徐峰;徐洲;华雪梅;赵红;韩平;施毅;张荣;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093;Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093 [2]Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009

出　　处：《Chinese Physics Letters》2013年第7期247-250,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China under Grant Nos 61176063,60990311,60820106003,60906025,and 60936004;the Natural Science Foundation of Jiangsu Province under Grant Nos BK2008019,BK2010385,BK2009255,and BK2010178;the Research Funds from NJUYangzhou Institute of Optoelectronics.

摘　　要：We report on the photoluminescent characteristics of InGaN/GaN multiple quantum well(MQW)nanorod arrays with high internal quantum efficiency.The InGaN/GaN MQWs are grown by metalorganic chemical vapor deposition on c-plane sapphire substrates,and then the MQW nanorod arrays are fabricated by using inductively coupled plasma etching with self-assembled Ni nanoparticle mask with low-damage etching technique.The typical diameter of the nanorods is from 200 nm to 300 nm and the length is around 800 nm,which almost is dislocation free.At room temperature,an enhancement of 3.1 times in total integrated photoluminescence intensity is achieved from the MQW nanorod arrays,in comparison to that of the as-grown MQW structure.Based on the temperature-dependent photoluminescence measurements,the internal quantum efficiency of the nanorod structure is 59.2%,i.e.,1.75 times of as-grown MQW structure(33.8%).Therefore,the nanorod structure with a significant reduction of defects can be a very promising candidate for highly efficient light emitting devices.

关 键 词：INGAN/GAN technique. EFFICIENCY 

分 类 号：TN3[电子电信—物理电子学]