Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN  

作　　者：YAN Da-Wei ZHU Zhao-Min CHENG Jian-Min GU Xiao-Feng LU Hai 闫大为;朱兆旻;程建敏;顾晓峰;陆海(Key Laboratory of Advanced Process Control for Light Industry(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122;School of Electronics Science and Engineering,Nanjing University,Nanjing 210093)

机构地区：[1]Key Laboratory of Advanced Process Control for Light Industry(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122 [2]School of Electronics Science and Engineering,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2012年第8期217-220,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2010CB327504;the National Natural Science Foundation of China under Grant Nos 60936004 and 11074280;the Fundamental Research Funds for the Central Universities of China under Grant Nos JUSRP111A42,JUSRP211A37 and JUSRP20914;the State Key Laboratory of ASIC&System under Grant No 11KF003.

摘　　要：The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The low-forward-bias I–V curve of the Schottky junction is found to be dominated by trap-assisted tunneling below 400 K,and thus can not be used to deduce the Schottky barrier height(SBH)based on the thermionic emission(TE)model.On the other hand,TE transport mechanism dominates the high-forward-bias region and a modified I–V method is adopted to deduce the effective barrier height.It is found that the estimated SBH(~0.95 eV at 300 K)by the I–V method is~0.20 eV lower than that obtained by the C–V method,which is explained by a barrier inhomogeneity model over the Schottky contact area.

关 键 词：NI/AU SCHOTTKY BARRIER 

分 类 号：TN3[电子电信—物理电子学]