High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45V  

作　　者：ZHANG Dong-Yan ZHENG Xin-He LI Xue-Fei WU Yuan-Yuan WANG Jian-Feng YANG Hui 张东炎;郑新和;李雪飞;吴渊渊;王建峰;杨辉(Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics(SINANO),Chinese Academy of Sciences,Suzhou 215125;Graduate University of Chinese Academy of Sciences,Beijing 100190)

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics(SINANO),Chinese Academy of Sciences,Suzhou 215125 [2]Graduate University of Chinese Academy of Sciences,Beijing 100190

出　　处：《Chinese Physics Letters》2012年第6期295-298,共4页中国物理快报（英文版）

基　　金：Supported by the Joint Projects under Grant Nos Y1AAQ11001 and Y1EAQ31001;the Suzhou Solar Cell Research Project under Grant No ZXJ0903;the Ministry of Science and Technology of China under Grant No 2010DFA22770.

摘　　要：We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties.Thc open circuit voltage (Voc) keeps increasing logarithmically with concentration ratio until 60suns.The peak Voc of InGaN/GaN MQW solar cells,which has a predominant peak wavelength of 456nm from electroluminescence measurements,is found to be 2.45 V when the concentration ratio reaches 333×.Furthermore,the dcpendence of conversion efficiency and fill factor on concentration ratio are analyzed.

关 键 词：INGAN/GAN SOLAR QUANTUM 

分 类 号：TN3[电子电信—物理电子学]