Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells  

作　　者：YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI Yi ZHANG Rong ZHENG You-Dou 于治国;陈鹏;杨国锋;刘斌;谢自立;修向前;吴真龙;徐峰;徐州;华雪梅;韩平;施毅;张荣;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093;Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093 [2]Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009

出　　处：《Chinese Physics Letters》2012年第7期276-279,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Natural Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.

摘　　要：The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassembled nickel nanomask,and examined by room-temperature photoluminescence measurement.The key parameters in the etching process are rf power and ICP power.The internal quantum efficiency of nanorod MQWs shows a 5.6 times decrease substantially with the rf power increasing from 3W to 100W.However,it is slightly influenced by the ICP power,which shows 30% variation over a wide ICP power range between 30W and 600W.Under the optimized etching condition,the internal quantum efficiency of nanorod MQWs can be 40% that of the as-grown MQW sample,and the external quantum efficiency of nanorod MQWs can be about 4 times that of the as-grown one.

关 键 词：INGAN/GAN MEASUREMENT EFFICIENCY 

分 类 号：TN3[电子电信—物理电子学]