Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates  

作　　者：KONG Xin WEI Ke LIU Guo-Guo LIU Xin-Yu 孔欣;魏珂;刘果果;刘新宇(Microwave Devices and Integrated Circuits Department,Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029)

机构地区：[1]Microwave Devices and Integrated Circuits Department,Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029

出　　处：《Chinese Physics Letters》2012年第7期280-283,共4页中国物理快报（英文版）

基　　金：Supported by Major Program of the National Natural Science Foundation of China under Grant No 60890191;the National Basic Research Program of China under Grant No 2010CB327503.

摘　　要：Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated.The devices with a gate length of 160nm and a gate periphery of 2 × 75μmexhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics,compared with conventional HEMTs.Furthermore,the extrinsic transconductance of an MOSHEMT is 237.2mS/mm,only 7% lower than that of Schottky-gate HEMT.An extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal measurements.The high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.

关 键 词：ALGAN/GAN MOSHEMT MILLIMETER 

分 类 号：TN3[电子电信—物理电子学]