基于0.18μm CMOS加固工艺的抗辐射单元库开发  

Radiation Hardened Library Development Based on 0.18μm CMOS Radiation-Hardening Process

作　　者：姚进 左玲玲 周晓彬 刘谆 周昕杰 YAO Jin;ZUO Lingling;ZHOU Xiaobin;LIU Zhun;ZHOU Xinjie(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072

出　　处：《电子与封装》2021年第8期65-70,共6页Electronics & Packaging

摘　　要：抗辐射单元库是快速完成抗辐射数字电路设计的基础。基于0.18μm CMOS加固工艺总剂量及单粒子效应加固策略,从单元库规格制定、逻辑与版图设计、单元库特征参数提取及布局布线文件抽取、单元库设计套件质量保证到最终硅验证,完成了抗辐射单元库的全流程开发。抗辐射单元库在速度、面积、功耗及抗辐射性能4个方面表现出良好的均衡性,具有广泛的应用前景。Radiation hardened library is the basis of fast radiation hardened digital circuit design.Based on radiation hardened strategy of total ionizing dose and single event effect in 0.18μm CMOS radiation-hard process,through the library specification making,logic and layout design,cell characterization and automatic place and route file abstract,library design kit quality assurance to final silicon verification,the whole process development of radiation harden library is realized.The radiation harden library achieves a good balance in speed,area,power and radiation harden performance,and it has a wide application prospect.

关 键 词：标准单元库 抗辐射 单元库验证 

分 类 号：TN402[电子电信—微电子学与固体电子学]