Silicon-on-Insulator 2×2 Symmetric Optical Switch Based on Total Internal Reflection  

作　　者：ZHAO Ce-zhou LIU En-ke LI Guo-zheng LIU Yu-liang GUO Lin 赵策洲;刘恩科;李国正;刘育梁;郭林(Microelectronics Institute,Xidian University,Xi'an 710071;Department of Electronic Engineering,Xi'an Jiaotong University,Xi'an 710049;Sichuan Institute of Solid-state Circuits,Chongqing 630060)

机构地区：[1]Microelectronics Institute,Xidian University,Xi'an 710071 [2]Department of Electronic Engineering,Xi'an Jiaotong University,Xi'an 710049 [3]Sichuan Institute of Solid-state Circuits,Chongqing 630060

出　　处：《Chinese Physics Letters》1997年第2期106-108,共3页中国物理快报（英文版）

基　　金：Supported by the High Technology Research and Development Programme of China.

摘　　要：Based on the large cross-section single-mode rib waveguide condition,the total internal reflection and the free-carrier plasma dispersion effect,a silicon-on-insulator(SOI)2×2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated,in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing.The device performance is measured at the wavelength of 1.3μm.It shows that the crosstalk and insertion loss are less than -18.1 and 4.8 dB,respectively,at an injection current of 60mA,and response time is 110 ns.

关 键 词：WAVEGUIDE SOI POLISHING 

分 类 号：TN2[电子电信—物理电子学]