Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon  

作　　者：SHEN Bo YANG Kai CHEN Peng ZHANG Rong SHI Yi ZHENG You-dou T.Sekiguchi K.Sumino 沈波;杨凯;陈鹏;张荣;施毅;郑有炓;T.Sekiguchi;K.Sumino(Department of Physics,Institute of Solid Solid State Physics,Nanjing University,Nanjing 210093;Institute for Materials Research,Tohoku University,Sendai 980,Japan)

机构地区：[1]Department of Physics,Institute of Solid Solid State Physics,Nanjing University,Nanjing 210093 [2]Institute for Materials Research,Tohoku University,Sendai 980,Japan

出　　处：《Chinese Physics Letters》1997年第6期436-439,共4页中国物理快报（英文版）

摘　　要：Electrical activity of Frank partial dislocations bounding stacking faults and the influence of Fe impurities in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current(EBIC)technique.Frank partials free from metallic impurities exhibit EBIC contrast at low temperature but not at room temperature,indicating that they are only accompanied with shallow energy levels in the band gap.The energy level related to a Frank partial is determined to be about Ec-0.08eV in n-type Si.Frank partials decorated by Fe impurities become EBIC active at room temperature.

关 键 词：temperature. technique. CZOCHRALSKI 

分 类 号：O47[理学—半导体物理]