Observation of the Third Subband Population in Modulation-Doped InGaAs/InAlAs Heterostructure  

作　　者：LI Han-xuan WANG Zhan-guo LIANG Ji-ben XU Bo LU Mei WU Ju GONG Qian JIANG Chao LIU Feng-qi ZHOU Wei 李含轩;王占国;梁基本;徐波;卢梅;吴巨;龚谦;江潮;刘峰奇;周伟(Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》1998年第1期57-59,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China.

摘　　要：The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred at 0.737,0.908,and 0.980eV are observed,which are attributed to the transitions from the lowest three electron subbands to the n=1 heavy-hole subband.The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation.Thanks to the presence of Fermi cutoff,the population ratio of these three subbands can be estimated.Temperature and excitation-dependent luminescences are also analyzed.

关 键 词：INGAAS/INALAS TRIANGLE excitation 

分 类 号：TN3[电子电信—物理电子学]