Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment  

作　　者：YIN Min LOU Li-ren FU Zhu-xi 尹民;楼立人;傅竹西(Structure Research Laboratory,University of Science and Technology of China and Chinese Academy of Sciences,Hefei 230026;Department of Physics,University of Science and Technology of China,Hefei 230026)

机构地区：[1]Structure Research Laboratory,University of Science and Technology of China and Chinese Academy of Sciences,Hefei 230026 [2]Department of Physics,University of Science and Technology of China,Hefei 230026

出　　处：《Chinese Physics Letters》1997年第9期690-693,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.8688601.

摘　　要：A new method for metalorganic chemical vapor deposition(MOCVD)of GaAs on Si substrates is developed.Instead of the usual high temperature surface cleaning treatment for Si substrate,the new method uses room temperature HF vapor polishing in the preparation chamber in the MOCVD system as the first step of the growth.Single crystal GaAs layers with mirror-like surfaces were obtained.

关 键 词：MOCVD POLISHING MIRROR 

分 类 号：TN3[电子电信—物理电子学]