The Theoretical Investigation and Analysis of High-Performance ZnO Double-Gate Double-Layer Insulator Thin-Film Transistors  

作　　者：GAO Hai-Xia HU Rong YANG Yin-Tang 高海霞;胡榕;杨银堂(School of Microelectronics,Xidian University,Xi’an 710071)

机构地区：[1]School of Microelectronics,Xidian University,Xi’an 710071

出　　处：《Chinese Physics Letters》2012年第1期235-237,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China for Distinguished Young Scholars under Grant No 60725415;the Fundamental Research Funds for the Central Universities under Grant No K50510250001.

摘　　要：A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance.Compared with the conventional ZnO thin-film transistor structure,the novel thinfilm transistor has a higher on-state current,steeper sub-threshold characteristics and a lower threshold voltage,owing to the double-gate and high-k dielectric.Based on two-dimensional simulation,the potential channel distribution and the reasons for the improvement in performance are investigated.

关 键 词：TRANSISTOR double structure 

分 类 号：TN3[电子电信—物理电子学]