Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (1122) GaN  

在线阅读下载全文

作  者:XU Sheng-Rui LIN Zhi-Yu XUE Xiao-Yong LIU Zi-Yang MA Jun-Cai JIANG Teng MAO Wei WANG Dang-Hui ZHANG Jin-Cheng HAO Yue 许晟瑞;林志宇;薛晓咏;刘子扬;马俊彩;姜腾;毛维;王党会;张进成;郝跃(Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071)

机构地区:[1]Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071

出  处:《Chinese Physics Letters》2012年第1期254-256,共3页中国物理快报(英文版)

基  金:Supported by the Fundamental Research Funds for the Central Universities under Grant No K50511250002;the National Key Science&Technology Special Project under Grant No 2008ZX01002-002;the Major Program and State Key Program of the National Natural Science Foundation of China under Grant Nos 60890191 and 60736033.

摘  要:Nonpolar (1120) and semipolar (1122) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the density of BSFs for the semipolar (1122) and nonpolar a-plane GaN template is 3×10^(5) cm^(-1) and 8×10^(5) cm^(-1),respectively.The semipolar (1122) GaN shows an arrowhead-like structure,and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis.Both nonpolar (11(2)0) and semipolar (1122) GaN have very strong BSF luminescence due to the optically active character of the BSFs.

关 键 词:GAN SAPPHIRE MOCVD 

分 类 号:TN3[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象