采用平面分栅结构的高增益宽带射频VDMOS研制  

Development of high-gain broadband RF VDMOS using planar split gate structure

作　　者：于淼 宋李梅[1,2,3] 李科 丛密芳[2,3] 李永强[2,3] 任建伟[2,3] Yu Miao;Song Limei;Li Ke;Cong Mifang;Li Yongqiang;Ren Jianwei(University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029 [3]中国科学院硅器件技术重点实验室,北京100029

出　　处：《电子技术应用》2021年第7期1-4,11,共5页Application of Electronic Technique

摘　　要：硅基射频场效应晶体管具有线性度好、驱动电路简单、开关速度快、热稳定性好、没有二次击穿等优点,在HF、VHF和UHF波段具有广阔的应用前景。针对射频场效应晶体管宽带、高增益和高效率的应用需求,基于标准平面MOS工艺,采用平面分栅(split gate)结构,通过优化结构和工艺参数研制出一款工作电压为28 V的硅基射频垂直双扩散金属氧化物半导体场效应晶体管(VDMOS)。该器件在30~90 MHz频段范围内,小信号增益大于19 dB,在60 MHz频点下连续波输出功率可以达到87 W,功率附加效率达72.4%,具有优异的射频性能。Silicon-based radio frequency field effect transistors have the advantages of excellent linearity,simple drive circuit,fast switching speed,excellent thermal stability,no secondary breakdown,etc.,and have broad application prospects in HF,VHF and UHF bands.In view of the application requirements of the RF field effect transistors with broadband,high gain and high efficiency,based on the standard planar MOS process,the split gate structure was adopted and a silicon-based RF vertical double-diffused metal oxide semiconductor field effect transistor with working voltage of 28 V was developed by optimizing the structure and process parameters.In the frequency range from 30 MHz to 90 MHz,the device can achieve small signal gain greater than 19 dB,the continuous wave output power can reach 87 W at the frequency of 60 MHz,the power added efficiency up to 72.4%,has excellent radio frequency performance.

关 键 词：射频 场效应晶体管 分栅 高增益 宽带 高效率 

分 类 号：TN386.1[电子电信—物理电子学]