Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer  

作　　者：LE Zi-chun L.Dreeskornfeld S.Rahn R.Segler U.Kleineberg U.Heinzmann 乐孜纯;L.Dreeskornfeld;S.Rahn;R.Segler;U.Kleineberg;U.Heinzmann(Institute of Atomic and Molecular Physics,Jilin University,Changchun 130012;Fakultät für Physik,Universität Bielefeld,Universitatsstraβe 25,D-33615 Bielefeld,Germany)

机构地区：[1]Institute of Atomic and Molecular Physics,Jilin University,Changchun 130012 [2]Fakultät für Physik,Universität Bielefeld,Universitatsstraβe 25,D-33615 Bielefeld,Germany

出　　处：《Chinese Physics Letters》1999年第9期665-666,共2页中国物理快报（英文版）

基　　金：the German Research Society Deutsche Forschungsgesellschaft(Forschergruppe Nanometerschichtsysteme).

摘　　要：Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The etch rate,selectivity and etch profile were investigated as a function of the gas mixture,pressure,and plasma rf power.The groove depth and the etch proHle were investigated by an atomic force microscope before RIE,after RIE and after resist removal.

关 键 词：MO/SI smallest SELECTIVITY 

分 类 号：O17[理学—数学]