Two-Wave Mixing in Resonant Photorefractive GaAs/AlGaAs Semi-insulating Multiple Quantum Wells  

作　　者：HU Chengyong ZHANG Zhiguo KANG Jing FENG Wei HU Qiang HUANG Qi ZHOU Junming 

机构地区：[1]Institute of Physics,Academia Sinica,Being 100080 [2]National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Academia Sinica,Being 100083

出　　处：《Chinese Physics Letters》1995年第6期358-361,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under the No.69478001.

摘　　要：We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique.Under the non-optimized condition,we have obtained the two-wave mixing gain larger than 180cm^(-1) at wavelength near 784nm for a field of 10kV/cm.Energy transfer is also observed when the applied field is perpendicular to the grating vector.

关 键 词：GAAS/ALGAAS TECHNIQUE PHOTOREFRACTIVE 

分 类 号：TN2[电子电信—物理电子学]