An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method  

作　　者：HE Su-Ming LUO Xiang-Dong ZHANG Bo FU Lei CHENG Li-Wen WANG Jin-Bin LU Wei 何素明;罗向东;张波;傅雷;程立文;王金斌;陆卫(Key Laboratory of Low-Dimensional Materials and Application Technology of Ministry of Education,Xiangtan University,Xiangtan 411105;National Lab for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)

机构地区：[1]Key Laboratory of Low-Dimensional Materials and Application Technology of Ministry of Education,Xiangtan University,Xiangtan 411105 [2]National Lab for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083

出　　处：《Chinese Physics Letters》2012年第12期215-218,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB925604,2011CB922004;the Natural Science Foundation of China(10990103,60906058);Shanghai Committee of Science and Technology(09DJ1400700,11DZ1140900);China Postdoctoral Science Foundation(20110490075).

摘　　要：The junction temperature of red,green and blue high power light emitting diodes(LEDs)is measured by using the emission peak shift method and the forward voltage method.Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature.The linear coefficients of the red,green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/℃ and from 1.33 to 3.59 mV/℃,respectively.Compared with the forward voltage method,the peak shift method is almost independent of bias current and sample difference.The variation of the slopes is less than 2%for the peak shift method and larger than 30%for the forward voltage method,when the LEDs are driven by different bias currents.It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions.

关 键 词：temperature. DIODES METHOD 

分 类 号：TN3[电子电信—物理电子学]