Sb Rich Ge_(2)Sb_(5)Te_(5) Alloy for High-Speed Phase Change Random Access Memory Applications  

作　　者：ZHANG Qi SONG San-Nian XU Feng 张琪;宋三年;徐峰(Key Laboratory of MEMS of Ministry of Education,School of Electronic Science&Engineering,Southeast University,Nanjing 210096;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences,Shanghai 200050)

机构地区：[1]Key Laboratory of MEMS of Ministry of Education,School of Electronic Science&Engineering,Southeast University,Nanjing 210096 [2]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences,Shanghai 200050

出　　处：《Chinese Physics Letters》2012年第10期221-223,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906003,60906004,61006087,61076121,61106055).

摘　　要：Sb rich Ge_(2)Sb_(5)Te_(5) materials are investigated for use as the storage medium for high-speed phase change memory(PCM).Compared with conventional Ge2Sb2Te5,Ge_(2)Sb_(5)Te_(5) films have a higher crystallisation temperature(~200℃),larger crystallisation activation energy(3.13 eV),and a better data retention ability(100.2℃ for ten years).A reversible switching between set and reset states can be realised by an electric pulse as short as 5 ns for Ge_(2)Sb_(5)Te_(5)-based PCM cells,over 10 times faster than the Ge_(2)Sb_(5)Te_(5)-based one.In addition,Ge2Sb2Te5 shows a good endurance up to 3×10^(6) cycles with a resistance ratio of about three orders of magnitude.This work clearly reveals the highly promising potential of Ge_(2)Sb_(5)Te_(5) films for applications in high-speed PCM.

关 键 词：resistance FASTER RETENTION 

分 类 号：TG1[金属学及工艺—金属学]