Analysis of Responsivity and Signal-to-Noise Ratio in PEPT  

作　　者：ZHOU Quan GUO Shu-Xu LI Zhao-Han SONG Jing-Yi CHANG Yu-Chun 周泉;郭树旭;李兆涵;宋静怡;常玉春(State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012)

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012

出　　处：《Chinese Physics Letters》2012年第11期70-73,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61076046 and 61106003;the Science and Technology Development Plan Projects of Jilin Province(No 20100501)。

摘　　要：We analyze the responsivity and signal-to-noise ratio(SNR)of a punchthrough enhanced phototransistor(PEPT).Measurement results show that the PEPT exhibits a good response to light over a wide range of intensity.Because the responsivity is still as high as 106 A/W when the bias voltage is as low as 0.2 V,the device is suitable for ultra-low voltage applications.Meanwhile,with 1–10μA bias current,the PEPT shows the best performance for the responsivity and SNR.When incident light is as low as 3.8×10^(-8) W/cm^(2),the responsivity reaches approximately 108 A/W.The super high responsivity of PEPTs makes it possible to fabricate small sized photodetector.

关 键 词：RESPONSIVITY TRANSISTOR SIGNAL 

分 类 号：TN3[电子电信—物理电子学]