Ultra Low Dark Current,High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes  

作　　者：LI Bin YANG Huai-Wei GUI Qiang YANG Xiao-Hong WANG Jie WANG Xiu-Ping LIU Shao-Qing HAN Qin 李彬;杨怀伟;归强;杨晓红;王杰;王秀平;刘少卿;韩勤(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083)

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083

出　　处：《Chinese Physics Letters》2012年第11期224-226,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61176053,61274069,61021003;the National Key Basic Research Program of China under Grant No 2012CB933503;the National High-Technology Research and Development Program of China under Grant No 2012AA012202.

摘　　要：A separate absorption,grading,charge and multiplication InGaAs/InP avalanche photodiode with ultra low dark current and high responsivity is demonstrated.It has a thin multiplication layer and a planar structure.Through the use of a well and a single floating guard ring to suppress edge breakdown,the device can easily be fabricated by one step epitaxial growth and one step diffusion.The dark current of a 30μm diameter device is as low as 0.028 nA at punch-through and 0.1 nA at 90%of the breakdown voltage.The responsivity at 1.55μm is 0.93 A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.

关 键 词：INGAAS/INP BREAKDOWN FLOATING 

分 类 号：TN3[电子电信—物理电子学]