Characteristics of an Indium-Rich InGaN p-n Junction Grown on a Strain-Relaxed InGaN Buffer Layer  

作　　者：YANG Lian-Hong ZHANG Bao-Hua GUO Fu-Qiang 杨莲红;张保花;郭福强(Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matter,Yili Normal University,Yining 835000;Department of Physics,Changji College,Changji 831100)

机构地区：[1]Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matter,Yili Normal University,Yining 835000 [2]Department of Physics,Changji College,Changji 831100

出　　处：《Chinese Physics Letters》2013年第4期174-176,共3页中国物理快报（英文版）

基　　金：the Opening Project of Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matters(Nos XJDX0912-2012-03,XJDX0912-2012-02);the Project of Changji Collge(Nos 2011YJYB001,2011YJYB006).

摘　　要：An indium-rich InGaN p-n junction is grown on a strain-relaxed InGaN buffer layer.The results show that the n-InGaN is grown coherently on the buffer layer but the p-InGaN layer exhibits a partial strain relaxation.The fabricated InGaN p-n junction has a low reverse leakage current density on the order of 10^(-8)A/cm^(2)within the measured voltage range,and exhibits a wide spectral response due to the presence of band tail states or deep level states which origin from indium composition fluctuation or various defects.The measured peak responsivity at 438 nm is 31 mA/W at zero bias and reaches 118 mA/W at 3 V reverse bias.In addition,the Raman spectra of the p-and n-type InGaN alloys are also analyzed.

关 键 词：INGAN relaxed INDIUM 

分 类 号：TN3[电子电信—物理电子学]