寄生参数对并联SiC MOSFET电流不均衡的影响  

The Influence of Parasitic Parameters on Current Imbalance of Parallel SiC MOSFET

作　　者：张永刚 宁平凡[1,2,3] 刘婕[1,3] 王迪迪 肖宁如 李玉强 ZHANG Yonggang;NING Pingfan;LIU Jie;WANG Didi;XIAO Ningru;LI Yuqiang(School of Electrical Engineering and Automation,Tiangong University,Tianjin 300387,China;School of Electronics and Information Engineering,Tiangong University,Tianjin 300387,China;Engineering Research Center of Ministry of Education for High-power Semiconductor Lighting Application System,Tiangong University,Tianjin 300387,China)

机构地区：[1]天津工业大学电气工程与自动化学院,天津300387 [2]天津工业大学电子与信息工程学院,天津300387 [3]天津工业大学大功率半导体照明应用系统教育部工程研究中心,天津300387

出　　处：《聊城大学学报（自然科学版）》2021年第5期8-14,共7页Journal of Liaocheng University:Natural Science Edition

基　　金：国家自然科学基金项目(11804249);天津市教委科研计划项目(2018ZD15,2018KJ210)资助。

摘　　要：SiC MOSFET并联使用是提高系统功率密度的有效手段。在高频高压环境中并联使用的SiC MOSFET,由于寄生电感,寄生电容等因素的差异,导致并联电流难以实现均衡。为分析导致电流不均衡现象的影响因素,本文采用CREE公司官网所提供的spice模型搭建了相关仿真测试电路。基于数据手册中所提供的器件参数,分别对寄生电容和寄生电感等参数进行差异化设置,利用PSpice软件进行仿真。分析了在负载电压为600 V时,不同寄生参数对动态和静态电流不均衡的影响程度。最后设计了一种基于阻抗平衡联合磁芯电感的方法对并联SiC MOSFET动静态电流不均衡进行抑制,有效抑制了并联SiC MOSFET电流不均衡现象的发生。The parallel connection of SiC MOSFET is an effective means to increase the power density of the system.For SiC MOSFET used in parallel in high-frequency and high voltage environments,the differences of parasitic inductance,parasitic capacitance and other factors make it difficult to realize the equalization of the parallel current.Therefore,in order to analyze the factors that lead to the current imbalance,this paper uses the spice model provided by CREE company official website to build the related simulation and test circuit.Based on the device parameters provided in the data sheet,the parasitic capacitance and parasitic inductance were differentially set,and simulation was conducted with PSpice software.The influence of different parasitic parameters on the dynamic and static current imbalance at the load voltage of 600V is analyzed.Finally,a method based on impedance balance combined with core inductance is designed to suppress the dynamic and static current imbalance of parallel SiC MOSFET,which can effectively inhibit the current imbalance.

关 键 词：寄生电感 寄生电容 并联SiC MOSFET 电流不均衡 

分 类 号：TN32[电子电信—物理电子学]