CdS紫外探测器芯片的制备研究  

Preparation of a CdS Ultraviolet Detector

作　　者：何雯瑾[1] 信思树[1] 钟科 柴圆媛 黎秉哲 杨文运[1] 太云见[1] 袁俊[1] HE Wenjin;XIN Sishu;ZHONG Ke;CHAI Yuanyuan;LI Bingzhe;YANG Wenyun;TAI Yunjian;YUAN Jun(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2021年第8期773-776,共4页Infrared Technology

摘　　要：针对紫外探测器在紫外-红外双色探测器中的工程化应用需求,开展了 Pt/CdS肖特基紫外探测器研究,通过对CdS晶片表面处理工艺、Pt电极制备及紫外芯片退火等关键技术进行优化研究,并对Pt/CdS肖特基紫外探测器性能进行测试分析。测试结果表明:Pt/CdS肖特基紫外探测器在0.3~0.5 μm下响应率大于0.2A/W,对3~5 μm红外波长的平均透过率大于80%,很好地满足了紫外-红外双色探测器中的工程化应用要求。A Pt/CdS Schottky UV detector was developed and studied based on the engineering application requirements of UV/IR dual-colored detectors.Key technologies such as the chip wafer surface treatment process for CdS,preparation process of the Pt electrode,and annealing of the UV detector chip were studied.The performance of the Pt/CdS Schottky UV detector was also analyzed.The results suggested a photo response rate of more than 0.2 A/W for wavelengths of 0.3-0.5 μm and an average transmittance of more than 80% for wavelengths of 3-5 μm,which meet the engineering requirements of UV/IR dual-color detectors.

关 键 词：Pt/CdS 肖特基 紫外探测器 I-V特性 

分 类 号：TN23[电子电信—物理电子学]