B靶溅射功率对FeGaB薄膜磁性能的影响  

Effect of B target sputtering power on the magnetic properties of FeGaB thin films

作　　者：任绥民 刘颖力[1] REN Sui-min;LIU Ying-li(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《磁性材料及器件》2021年第4期12-15,共4页Journal of Magnetic Materials and Devices

摘　　要：采用磁控共溅射法制备FeGaB合金薄膜,FeGa靶的溅射功率为40 W,通过调整B靶的溅射功率来调控薄膜的成分。结果表明,制备出的FeGaB薄膜厚度均匀,呈非晶态,具有较小的矫顽力和较大的磁致伸缩系数。当B靶的射频溅射功率大于30 W时,薄膜的矫顽力H_(c)降低到2.1 Oe左右。B靶溅射功率增大时,B元素的含量增大,FeGaB薄膜的磁致伸缩系数先增大后减小。当溅射功率为40 W时、B元素含量为11.9%,FeGaB薄膜的磁致伸缩系数达到64 ppm。The FeGaB alloy thin films were prepared by magnetron co-sputtering method with FeGa targest puttering power of 40 W.The composition of the FeGaB thin films was modulated by the RF sputtering power of the B target.The results show that the prepared FeGaB films are amorphous with uniform thickness,lower coercivity and higher magnetostrictive coefficient.When the radio-frequency sputtering power of B target is greater than 30 W,the coercivity of the film is reduced to about 2.1 Oe.When the sputtering power of B target increases,the content of B element gradually increases,and the magnetostrictive coefficient of FeGaB film increases first and then decreases.For the sputtering power of 40 W and B content of 11.9%,the FeGaB film has a magnetostrictive coefficient up to 64 ppm.

关 键 词：FeGaB薄膜 磁控溅射 B靶溅射功率 矫顽力 

分 类 号：TM271.2[一般工业技术—材料科学与工程]