一种应用于可见光通信系统的高带宽CMOS APD  

A High Bandwidth CMOS APD for Visible Light Communication Systems

作　　者：王巍[1] 曾虹谙 王方 毛鼎昌 冯世娟[1] 王冠宇[1] 袁军[1] WANG Wei;ZENG Hongan;WANG Fang;MAO Dingchang;FENG Shijuan;WANG Guanyu;YUAN Jun(Department of Microelectronics,College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,CHN)

机构地区：[1]重庆邮电大学光电工程学院/国际半导体学院微电子系,重庆400065

出　　处：《半导体光电》2021年第3期308-314,共7页Semiconductor Optoelectronics

基　　金：重庆市重大主题专项项目(cstc2018jszxcyztzxX0046,cstc2018jszx-cyztzxX0054)。

摘　　要：采用标准的0.18μm CMOS工艺,设计了一种新型的应用于可见光通信系统的雪崩光电二极管(APD)。相较于传统的CMOS APD,该器件在深n阱/p衬底的结构基础上增加一层p阱,再在其上分别离子注入一层n^(+)/p^(+)层作为器件的雪崩击穿层,并且采用STI结构来防止器件边缘过早击穿。仿真结果表明,器件的雪崩击穿电压为9.9V,暗电流为1×10^(-12)A,3dB带宽为5.9GHz,响应度为1.2A/W。由于STI保护环和短接深n阱/p衬底的结构设计,器件暗电流较传统结构CMOS APD降低了2个量级,且带宽提高了约10%。A new kind of avalanche photodiode(APD)device applied in the visible light communication system was designed by using standard 0.18μm CMOS process.Compared to regular CMOS APD devices,the designed device adds a p-well layer to the deep n-well/p substrate structure,and an n^(+)/p^(+)layer is deposited upon it.The n^(+)/p^(+)layer acts as an avalanche breakdown layer of the device and an STI structure is used to prevent the edge breaks prematurely.The simulation results show that,the avalanche breakdown voltage is as low as9.9 V,the dark current is 1×10^(-12)A,the 3 dB bandwidth is 5.9 GHz,and the responsibility is 1.2 A/W.Due to the specific structure design of STI protection ring and short-circuit connection of deep n-well/p substrate,the dark current is reduced by about 2 orders of magnitude,and the bandwidth is improved by about 10%compared to that of regular CMOS APD.

关 键 词：雪崩光电二极管 可见光通信 CMOS PN结 STI保护环 带宽 响应度 

分 类 号：TN722[电子电信—电路与系统]