ZnO微纳结构对GaN基LED光提取效率的影响研究  

Influence of ZnO Micro-nano Structure on the Light Extraction Efficiency of GaN-based LED

作　　者：雒倩男 胡芳仁[1,2] 贾博仑 LUO Qiannan;HU Fangren;JIA Bolun(Nanjing University of Posts and Telecommunications College of Electronic and Optical Engineering,,Nanjing 210023,CHN;Nanjing University of Posts and Telecommunications College of Microelectronics,Nanjing 210023,CHN;Nanjing University of Posts and Telecommunications College of Communication and Information Engineering,Nanjing 210023,CHN)

机构地区：[1]南京邮电大学电子与光学工程学院,南京210023 [2]南京邮电大学微电子学院,南京210023 [3]南京邮电大学通信与信息工程学院,南京210023

出　　处：《半导体光电》2021年第3期315-320,326,共7页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61574080)。

摘　　要：基于时域有限差分法(FDTD)在GaN基LED表面分别生长了ZnO柱状与锥状微纳结构,并利用Rsoft模拟仿真软件分析了两种结构的几何参量(排列周期p、高度H、底面直径D等)对GaN基LED光提取效率的影响。结果表明两种结构均可提高器件的光提取效率,柱状结构在H=0.25μm,p=1.5μm,D=0.9μm时表现最优,其光提取效率是未加任何结构平板LED的5.6倍;而锥状结构在H=0.6μm,p=1.4μm,D=1.4μm时表现最优,其光提取效率是未加任何结构平板LED的5.3倍。研究结果对高性能GaN基LED的设计与制备具有一定指导意义。ZnO columnar and cone-shaped micro-nano structures were grown on the surface of GaN-based LEDs by using the finite difference time domain method(FDTD).The Rsoft simulation software was used to analyze the influence of the geometric parameters of the two structures,such as the arrangement period P,height H,bottom diameter D,etc.,on the light extraction efficiency of GaN-based LEDs.The results show that both structures can improve the light extraction efficiency of the device.The columnar structure performs the best when H=0.25μm,P=1.5μm and D=0.9μm,and its light extraction efficiency is 5.6 times that of flat panel LEDs without any structure.The cone-shaped structure performs the best when H=0.6μm,P=1.4μm,and D=1.4μm,and its light extraction efficiency is 5.3 times that of flat panel LEDs without any structure.

关 键 词：ZnO微纳结构 光提取效率 GAN基LED 时域有限差分 

分 类 号：TN312.8[电子电信—物理电子学]