HCVD法生长InN纳米棒的可控制备及表征  

Controlled preparation and characterization of InN nanorods grown by HCVD

作　　者：朱佳 岳明月 李天保[1] 刘培植[2] 郭俊杰[2] 许并社[2] ZHU Jia;YUE Mingyue;LI Tianbao;LIU Peizhi;GUO Junjie;XU Bingshe(College of Material Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学材料科学与工程学院,太原030024 [2]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024

出　　处：《功能材料》2021年第8期8094-8099,共6页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51672185);山西省自然科学基金资助项目(201801D121101)。

摘　　要：实验通过自制的卤化物化学气相沉积(HCVD)装置在Si(111)衬底上实现了InN纳米棒的可控生长。系统研究了InCl_(3)源区温度、NH_(3)流量和N_(2)载气流量对InN纳米棒生长的影响,并利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线能谱仪(EDS)对样品结构,形貌和元素组成进行了表征。结果表明,InCl_(3)源区温度的升高,有利于提高生长区InN纳米棒的形核率和生长速率;NH_(3)流量大小对InN纳米棒晶体质量有重要影响,适量NH_(3)流量会满足In源生长需要的Ⅴ/Ⅲ比,改善纳米棒晶体质量,当NH_(3)流量过大时,In空位缺陷的形成会使晶体质量变差;N_(2)载气流量大小会影响In源和N源的浓度和偏压,从而能有效调控InN纳米棒直径和生长速率。研究实现了InN纳米棒的可控生长,为开发高性能InN纳米棒器件奠定了基础。In this study,controlled growth of InN nanorods on Si(111)substrates is realized by a self-made halide chemical vapor deposition(HCVD)device.The effects of temperature in the source region of InCl_(3),NH_(3)flow rate and N_(2)carrier gas flow rate on the growth of InN nanorods are systematically studied.The structure,morphology and elemental composition of InN nanorods are characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM)and energy dispersive X-ray spectroscopy(EDS).The results show that the nucleation rate and growth rate of InN nanorods can be improved with the increase of temperature in the source region of InCl_(3).The NH_(3)flow rate has an important influence on the crystal quality of InN nanorods.The appropriate NH_(3)flow rate can meet theⅤ/Ⅲratio required for In source growth,and improve the quality of nanorods.When the NH_(3)flow rate is too high,the formation of In vacancy defects make the crystal quality worse.N_(2)carrier gas flow can affect the concentration and bias of In and N sources,which can effectively regulate the diameter and growth rate of InN nanorods.The controllable growth of InN nanorods is realized,which lays a foundation for the development of high performance InN nanorod devices.

关 键 词：HCVD InCl_(3) InN纳米棒 NH_(3)流量 载气流量 

分 类 号：TB321[一般工业技术—材料科学与工程]