TiO_(x)薄膜阻变特性的氩等离子处理影响探讨  

Discussion on the Effect of Argon Plasma Treatment on The Resistive Switching Properties of TiO_(x) Films

作　　者：徐文彬[1] 任高潮 XU Wenbin;REN Gaochao(College of Information Engineering,Jimei University,Xiamen,Fujian Province,361021 China)

机构地区：[1]集美大学信息工程学院,福建厦门361021

出　　处：《科技创新导报》2021年第14期122-127,131,共7页Science and Technology Innovation Herald

基　　金：2019年度福建省自然科学基金项目(项目编号:2019J01717)。

摘　　要：本文探讨了氩气等离子处理对TiO_(x)薄膜阻变性能的影响,并根据阻变性能的变化,提出了改变等离子处理条件来优化阻变性能的思路。实验显示,随着等离子处理范围的增大,阻变forming-free特征出现的可能性在增大。而处理功率增长的影响主要体现在阻变层中氧空位含量的增加(XPS测定)和等离子处理电流的增大,但在面积较小试样中则逐渐趋于饱和。面积较大试样中没有出现伴随功率增长的饱和趋势,但阻变失效的可能性也同时增大。根据离子电流的测试结果,处理面积变化带来的影响归因于等离子功率的匹配条件不同,并引入了3个小单元并列处理的优化方式。最终结果显示,三单元处理方式在阻变值稳定性、氧空位调整和避免阻变失效等方面有突出的综合优势,有助于阻变性能的进一步提升研究。In this paper,the effect of argon plasma treatment on the resist-switching properties of TiO_(x) thin films is discussed.According to the relationship between the treatment conditions and resist-switching properties,the idea of changing plasma conditions to optimize the resistive properties is proposed.The experimental results show that with the increase of plasma treatment range,the possibility of forming-free increases,and the effect of treatment power increasement is mainly reflected in the increase of oxygen vacancy content(determined by XPS)and the increase of plasma treatment current,but this effect tends to saturate in the samples with smaller area.There is no saturation trend with the increase of power in the larger sample,but the possibility of resistance failure increases at the same time.According to the measurement results of ion current,the influence of the change of treatment range is attributed to the different matching conditions of plasma power,and the optimization method of three small units parallel processing is introduced.The final results show that the three unit treatment method has outstanding comprehensive advantages in the stability of resistance value,oxygen vacancy adjustment and avoiding resist-switching failure,which is helpful to further improve the resistance performance.

关 键 词：等离子 阻变 TiO_(x) 无电形成 氧空位 

分 类 号：TB383.2[一般工业技术—材料科学与工程]