PIC-integrable,uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN_(x) stressor  

作　　者：YIDING LIN DANHAO MA KWANG HONG LEE RUI-TAO WEN GOVINDO SYARANAMUAL LIONEL CKIMERLING CHUAN SENG TAN JURGEN MICHEL 

机构地区：[1]School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore [2]Low Energy Electronic Systems(LEES),Singapore-MIT Alliance for Research and Technology,Singapore 138602,Singapore [3]department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA [4]Materials Research Laboratories,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA [5]Max Planck Institute of Microstructure Physics,Halle(Saale)06120,Germany [6]Southern University of Science and Technology,Shenzhen 518055,China

出　　处：《Photonics Research》2021年第7期1255-1263,共9页光子学研究（英文版）

基　　金：National Research Foundation Singapore (NRFCRP19-2017-01);Ministry of Education-Singapore (AcRF Tier 1 (2019-T1-002-040 RG147/19 (S));Singapore-MIT Alliance for Research and Technology Centre (Low Energy Electronic Systems (LEES) IRG)。

摘　　要：Mechanical strain engineering has been promising for many integrated photonic applications. However,for the engineering of a material electronic bandgap,a trade-off exists between the strain uniformity and the integration compatibility with photonic-integrated circuits (PICs). Herein,we adopted a straightforward recess-type design of a silicon nitride (SiNx) stressor to achieve a uniform strain with enhanced magnitude in the material of interest on PICs. Normal-incidence,uniformly 0.56% tensile strained germanium (Ge)-on-insulator (GOI) metal-semiconductor-metal photodiodes were demonstrated,using the recessed stressor with 750 MPa tensile stress. The device exhibits a responsivity of 1.840.15 A∕W at 1550 nm. The extracted Ge absorption coefficient is enhanced by -3.2×to 8340 cm^(-1) at 1612 nm and is superior to that of In_(0.53)Ga_(0.47)As up to 1630 nm limited by the measurement spectrum. Compared with the nonrecess strained device,additional absorption coefficient improvement of 10%–20% in the C-band and 40%–60% in the L-band was observed. This work facilitates the recessstrained GOI photodiodes for free-space PIC applications and paves the way for various (e.g.,Ge,GeSn or III-V based) uniformly strained photonic devices on PICs.

关 键 词：RECESS STRAINED stress 

分 类 号：TN364.2[电子电信—物理电子学]