RECESS

作品数：24被引量：62H指数：3
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相关机构：中山市大涌陶瓷有限公司西安电子科技大学中芯国际集成电路制造(上海)有限公司中国矿业大学更多>>
相关期刊：《Frontiers of Information Technology & Electronic Engineering》《International Journal of Ophthalmology(English edition)》《Hepatobiliary & Pancreatic Diseases International》《Chinese Medical Journal》更多>>
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Correlation between the whole small recess offset and electrical performance of InP-based HEMTs
《红外与毫米波学报》2025年第1期40-45,共6页GONG Hang ZHOU Fu-Gui FENG Rui-Ze FENG Zhi-Yu LIU Tong SHI Jing-Yuan SU Yong-Bo JIN Zhi 
Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...
关键词：InP high-electron-mobility transistor(InP HEMT) INGAAS/INALAS DC/RF characteristic smallsignal modeling double-recessed gate process 
Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate
《Journal of Semiconductors》2024年第6期81-86,共6页Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu 
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron g...
关键词：AlGaN/GaN heterostructure ultrathin-barrier ENHANCEMENT-MODE RADIO-FREQUENCY power added efficiency silicon substrate 
Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
《Journal of Semiconductors》2022年第6期51-58,共8页Hao Wu Xuanwu Kang Yingkui Zheng Ke Wei Lin Zhang Xinyu Liu Guoqi Zhang 
This work was supported in part by Natural Science Foundation of China(Grant No.61804172);in part by GuangDong Province Key Technologies Research and Development Program(No.2019B010128001);in part by the Youth Innovation Promotion Association of CAS.
:In this work,the optimization of reverse leakage current(IR)and turn-on voltage(VT)in recess-free AlGaN/GaN Schottky barrier diodes(SBDs)was achieved by substituting the Ni/Au anode with TiN anode.To explain this phe...
关键词：ALGAN/GAN Schottky barrier diode TIN current transport mechanism 
Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process
《Chinese Physics B》2022年第5期743-748,共6页Bo Wang Peng Ding Rui-Ze Feng Shu-Rui Cao Hao-Miao Wei Tong Liu Xiao-Yu Liu Hai-Ou Li Zhi Jin 
supported by the National Natural Science Foundation of China(Grant Nos.61874036,62174041,and61434006);the Open Project of State Key Laboratory of ASIC and System(Grant No.KVH1233021);the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components(Grant No.FHR-JS-201909007);the Guangxi Innovation Research Team Project(Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152);the Guangxi Innovation Driven Development Special Fund Project(Grant No.AA19254015);the Guangxi Key Laboratory of Precision Navigation Technology and Application Project(Grant Nos.DH201906,DH202020,and DH202001)。
A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this paper.Single-recessed and double-recessed HEMTs with different gate offsets have been...
关键词：INP HEMT maximum oscillation frequency(fMAX) double-recess offset gate 
The Application of Music Therapy in Physical Exercise under the Background of New Era
《外文科技期刊数据库(文摘版)教育科学》2022年第4期201-205,共5页FANQing LEISun 
Music is the essence and soul of art, and music education is an important part of school education. In primary school music classroom teaching, teachers should use effective teaching strategies, innovate classroom tea...
关键词：physical exercise music therapy physical education class RECESS 
Experimental and theoretical study on the break phenomenon of self-pulsation for liquid-centered swirl coaxial injectors被引量：3
《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》2022年第2期140-155,共16页Peng-jin CAO Xiao BAI Qing-lian LI Peng CHENG 
supported by the National Natural Science Foundation of China(No.11872375);the National Science Foundation for Young Scientists of China(Nos.11802323,11902351,and 12102462)。
Experimental observations together with theoretical analysis were conducted to investigate the break phenomenon and the corresponding mechanisms of self-pulsation for a liquid-centered swirl coaxial injector with rece...
关键词：Break phenomenon Theoretical model of self-pulsation Pressure oscillation characteristics RECESS Liquid-centered swirl coaxial(LCSC)injector 
High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching
《Chinese Physics B》2022年第2期552-557,共6页Xinchuang Zhang Bin Hou Fuchun Jia Hao Lu Xuerui Niu Mei Wu Meng Zhang Jiale Du Ling Yang Xiaohua Ma Yue Hao 
supported by the National Natural Science Foundation of China(Grant Nos.62090014,62188102,62104184,62104178,and 62104179);the Fundamental Research Funds for the Central Universities of China(Grant Nos.XJS201102,XJS211101,XJS211106,and ZDRC2002)。
An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HE...
关键词：AlGaN/GaN HEMTs recess etching low damage high power added efficiency 
Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs被引量：2
《Chinese Physics B》2022年第1期675-679,共5页Ruize Feng Bo Wang Shurui Cao Tong Liu Yongbo Su Wuchang Ding Peng Ding Zhi Jin 
the National Natural Science Foundation of China(Grant No.61434006).
We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8...
关键词：InP HEMT INGAAS/INALAS current gain cut-off frequency(fT) maximum oscillation frequency(f_(max)) gate-recess length(L_(recess)) 
Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess
《Journal of Semiconductors》2021年第9期61-65,共5页Wen Shi Sen Huang Xinhua Wang Qimeng Jiang Yixu Yao Lan Bi Yuchen Li Kexin Deng Jie Fan Haibo Yin Ke Wei Yankui Li Jingyuan Shi Haojie Jiang Junfeng Li Xinyu Liu 
supported by National Natural Science Foundation of China under Grant 61822407,Grant 62074161,and Grant 11634002;in part by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)under Grant QYZDB-SSW-JSC012;in part by the National Key Research and Development Program of China under Grant 2016YFB0400105 and Grant 2017YFB0403000;in part by the Youth Innovation Promotion Association of CAS;in part by the University of Chinese Academy of Sciences;and in part by the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,CAS.
A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB)AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56...
关键词：ultrathin-barrier AlGaN/GaN heterostructure low thermal budget Au-free ohmic contact micro-patterned ohmic recess MIS-HEMTs transfer length 
PIC-integrable,uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN_(x) stressor
《Photonics Research》2021年第7期1255-1263,共9页YIDING LIN DANHAO MA KWANG HONG LEE RUI-TAO WEN GOVINDO SYARANAMUAL LIONEL CKIMERLING CHUAN SENG TAN JURGEN MICHEL 
National Research Foundation Singapore (NRFCRP19-2017-01);Ministry of Education-Singapore (AcRF Tier 1 (2019-T1-002-040 RG147/19 (S));Singapore-MIT Alliance for Research and Technology Centre (Low Energy Electronic Systems (LEES) IRG)。
Mechanical strain engineering has been promising for many integrated photonic applications. However,for the engineering of a material electronic bandgap,a trade-off exists between the strain uniformity and the integra...
关键词：RECESS STRAINED stress 
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