Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process  

作　　者：Bo Wang Peng Ding Rui-Ze Feng Shu-Rui Cao Hao-Miao Wei Tong Liu Xiao-Yu Liu Hai-Ou Li Zhi Jin 王博;丁芃;封瑞泽;曹书睿;魏浩淼;刘桐;刘晓宇;李海鸥;金智(Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China;High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China [2]High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Chinese Physics B》2022年第5期743-748,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61874036,62174041,and61434006);the Open Project of State Key Laboratory of ASIC and System(Grant No.KVH1233021);the Opening Foundation of the State Key Laboratory of Advanced Materials and Electronic Components(Grant No.FHR-JS-201909007);the Guangxi Innovation Research Team Project(Grant Nos.2018GXNSFGA281004 and 2018GXNSFBA281152);the Guangxi Innovation Driven Development Special Fund Project(Grant No.AA19254015);the Guangxi Key Laboratory of Precision Navigation Technology and Application Project(Grant Nos.DH201906,DH202020,and DH202001)。

摘　　要：A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this paper.Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized.Compared with single-recessed devices,the maximum drain-source current(I_(D,max))and maximum extrinsic transconductance(g_(m,max))of double-recessed devices decreased due to the increase in series resistances.However,in terms of RF performance,double-recessed HEMTs achieved higher maximum oscillation frequency(f_(MAX))by reducing drain output conductance(g_(m,max))and drain to gate capacitance(C_gd).In addition,further improvement of fMAXwas observed by adjusting the gate offset of double-recessed devices.This can be explained by suppressing the ratio of C_(gd)to source to gate capacitance(C_gd)by extending drain-side recess length(Lrd).Compared with the single-recessed HEMTs,the f;of double-recessed offset gate HEMTs was increased by about 20%.

关 键 词：INP HEMT maximum oscillation frequency(fMAX) double-recess offset gate 

分 类 号：TN386[电子电信—物理电子学]