宽带低噪声放大器的设计  

作　　者：叶波涛 

机构地区：[1]中国船舶重工集团公司第八研究院,江苏扬州225001

出　　处：《科技创新与应用》2021年第25期79-81,共3页Technology Innovation and Application

摘　　要：为实现低噪音放大器带宽的有效拓宽,依照分布型放大器的基础工作理论,应用0.13μmGaAs PHEMT工艺方法,工程技术人员开发了一类宽带范围超宽的单片微波式集成低噪音放大装置。应用6级分布形式拓扑方案,逐级应用共栅共源的主要构造并且设置去耦型电容,用以提升放大器的增益,优化增益图形的平坦程度,拓宽放大器的运行带宽。通过仿真模拟表明:该放大器位于(0.85~31.5)GHz范围内,其增益达到(15.5±1)dB,最大噪音系数<3.55dB,最小噪音系数只有1.75dB,输入及输出的回波损耗都满足<-10.5dB,放大器的运行电压是2.55V,电流损耗为71.5mA,1.5dB处压缩点的输出功率数值>10.5dBm,芯片模块面积是(2.15×1.25)mm。In order to effectively broaden the bandwidth of low noise amplifier,according to the basic working theory of distributed amplifier,using 0.13μm GaAs pHEMT process,engineers and technicians have developed a kind of monolithic microwave integrated low noise amplifier with ultra wide broadband range.By using the six-stage distributed topology scheme,the main structure of the common gate common source is applied step by step and the decoupling capacitor is set up to improve the gain of the amplifier,optimize the flatness of the gain pattern and broaden the operating bandwidth of the amplifier.The simulation results show that the amplifier is located in the range of(0.85-31.5)GHz,the gain is(15.5±1)dB,the maximum noise figure is less than 3.55dB,the minimum noise figure is only 1.75dB,the echo loss of input and output is less than-10.5dB,the operating voltage of the amplifier is 2.55V,the current loss is 71.5mA,and the output power at 1.5dB compression point is greater than 10.5dBm.The area of the chip module is(2.15×1.25)mm.

关 键 词：分布式放大器 GaAs pHEMT工艺 超宽带 单片微波集成电路 

分 类 号：TN722.3[电子电信—电路与系统]