PECVD反应腔内置辅助加热对氮化硅膜沉积的影响  

The Influence of Interior Auxiliary Heating in PECVD Reaction Chamber on the Deposition of Silicon Nitride Film

作　　者：李晔纯 张弥涛 李明 郭艳 LI Ye-chun;ZHANG Mi-tao;LI Ming;GUO Yan(Hunan Red Solar Photoelectricity Science and Technology Co.,Ltd.,Changsha 410205,China)

机构地区：[1]湖南红太阳光电科技有限公司,长沙410205

出　　处：《中小企业管理与科技》2021年第29期182-184,共3页Management & Technology of SME

摘　　要：典型加热方式的反应腔已逐渐难以满足硅片尺寸增大、装片量要求增多情况下的生产需要,论文提出在反应腔中内置辅助加热装置,并进行对比实验分析其对工艺的影响。实验结果显示,辅助加热装置在缩短升温时间、提升设备产能的情况下,得到更优氮化硅成膜均匀性指标,特别是对片间均匀性有较为明显的提升作用。The reaction chamber with typical heating mode has gradually been difficult to meet the production needs with the increase of silicon wafer size and loading requirements.This paper proposes to build an auxiliary heating device in the reaction chamber,and conduct comparative experiments to analyze its influence on the process.The experimental results show that the auxiliary heating device can obtain better silicon nitride film-forming uniformity index under the conditions of shortening the heating time and improving the equipment capacity,especially having a more obvious improvement effect on the uniformity between the wafers.

关 键 词：PECVD 辅助加热 工艺时间 均匀性 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]