衬底温度对射频溅射CeO_(2)薄膜微观结构的影响  

Influence of Temperature of Substrate during RF Sputtering on Microstructure of CeO_(2) Thin Films

作　　者：张茂彩 王誉 崔红兵 白林军 马强[3] 辛博[1] Zhang Maocai;Wang Yu;Cui Hongbing;Bai Linjun;Ma Qiang;Xin Bo(Baotou Rare Earth Research Institute,Rare Earth Resources Research and the Comprehensive Utilization State Key Laboratory of Bayan Obo,Ruike Rare Earth Metallurgy and Functional Materials National Engineering Research Center Co.,Ltd.,Baotou 014030,China;Shanxi Aerospace Tsinghua Equipment Co.,Ltd.,Changzhi 046000,China;Baotou Medical College,Baotou 014040,China)

机构地区：[1]包头稀土研究院,白云鄂博稀土资源研究与综合利用国家重点实验室,瑞科稀土冶金及功能材料国家工程研究中心有限公司,内蒙古包头014030 [2]山西航天清华装备有限责任公司,山西长治046000 [3]包头医学院血液保护研究所,内蒙古包头014040

出　　处：《中国稀土学报》2021年第4期587-593,共7页Journal of the Chinese Society of Rare Earths

基　　金：内蒙古自然科学基金项目(2017BS0805);内蒙古高等学校青年科技英才计划项目(NJYT-20-B22);内蒙古自治区科技重大专项(2018年度)资助。

摘　　要：为了通过射频溅射金属Ce靶与CeO_(2)靶能得到相同结构、相同性能的CeO_(2)薄膜,采用射频反应磁控溅射技术在玻璃衬底上沉积CeO_(2)薄膜,通过调控基体温度,分析其对薄膜成分、结构、形貌的影响规律,分别采用X射线衍射仪、场发射扫描电子显微镜、原子力显微镜对薄膜结构性能进行表征。结果表明:在沉积温度为600℃下,溅射金属Ce靶制备的CeO_(2)薄膜取向度最高,表面光滑平整,表面平均粗糙度只有1.03 nm,通过改变沉积温度能够很好地控制薄膜表面颗粒形貌。In order to obtain the ceria film with the same structure and the same performance by radio frequency(RF) sputtering metal Ce target and CeO_(2) target, the RF reactive magnetron sputtering technology was used to deposit CeO_(2) film on the glass substrate, and the film composition and structure were adjusted by controlling the substrate temperature. The influence of morphology was characterized by X-ray diffractometer, field emission scanning electron microscope and atomic force microscope. The results showed that the CeO_(2) film prepared by sputtering a metal Ce target has the highest orientation at 600 ℃, the surface is smooth and flat, and the average surface roughness is only 1.03 nm. By changing the deposition temperature, the surface morphology of the film can be well controlled.

关 键 词：CeO_(2)薄膜 射频反应磁控溅射 缓冲层 表面形貌 

分 类 号：O484.1[理学—固体物理]