Pd/Pt修饰的AlGaN/GaN HEMT器件氢传感特性研究  

Hydrogen sensing characteristics study of Pd/Pt modified AlGaN/GaN HEMT device

作　　者：杨勇强 张贺秋[1] 薛东阳 梁红伟[1] 夏晓川[1] 徐瑞良 梁永凤 韩永坤 陈帅昊 YANG Yongqiang;ZHANG Heqiu;XUE Dongyang;LIANG Hongwei;XIA Xiaochuan;XU Ruiliang;LIANG Yongfeng;HAN Yongkun;CHEN Shuaihao(School of Microelectronics, Dalian University of Technology, Dalian 116620, China)

机构地区：[1]大连理工大学微电子学院,辽宁大连116620

出　　处：《大连理工大学学报》2021年第5期531-536,共6页Journal of Dalian University of Technology

基　　金：国家自然科学基金资助项目(11975257,11675198,12075045,11875097,61574026,61774072);中央高校基本科研业务费专项资金资助项目(DUT20RC(3)042,DUT19RC(3)074,DUT19LK45);大连市科技创新基金资助项目(2018J12GX060).

摘　　要：制备了Pd/Pt修饰的AlGaN/GaN高电子迁移率晶体管(HEMT)器件.对器件的氢传感特性测试表明,Pd/Pt合金修饰的器件的氢响应和响应(恢复)速率要优于Pd和Pt单独修饰的器件,Pd和Pt质量比为2 mg∶1 mg的氢传感器具有最佳的氢传感性能.对吸附平衡的稳态分析进一步证实了这一结论.室温下氢体积分数为0.1%,氢气通入流速为200 mL/min时,Pd/Pt(2 mg∶1 mg)样品的电流变化为0.249 mA,响应时间和恢复时间分别为41 s和42 s.此外,测试温度增加到55℃也进一步提高了器件对氢气的响应和响应速率.Pd/Pt modified AlGaN/GaN high electron mobility transistors(HEMT)devices were fabricated and characterized for hydrogen sensing.The comparative experiments show that the response of hydrogen and response(recovery)rate of Pd/Pt alloy modified devices are significantly higher than that of Pd and Pt individually modified device and the hydrogen sensor with Pd and Pt mass ratio of 2 mg∶1 mg is confirmed to have the optimal hydrogen sensing performance.This conclusion is further confirmed by the steady-state analysis on adsorption equilibrium.Moreover,when hydrogen volume fraction is 0.1%at room temperature and the flow rate of hydrogen is 200 mL/min,the current change of Pd/Pt(2 mg∶1 mg)sample is 0.249 mA,and the response time and recovery time is 41 s and 42 s,respectively.In addition,increasing the test temperature to 55℃also further improves the response of hydrogen and response rate.

关 键 词：ALGAN/GAN高电子迁移率晶体管 Pd/Pt合金 氢传感器 氢吸附 

分 类 号：TN409[电子电信—微电子学与固体电子学]